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888 Nishikatakai, Nagaoka,
Niigata, 940-8532, Japan


Œ€‹†¬‰ΚRESULTS

Results

Papers - Original Papers | Patents | BooksECommentariesEReportsEArticles
International Conference | Domestic Conference

[25]On/Off Ratio of a Pentacene Field-Effect Transistor with a Discontinuous MoO3 Layer
T. Kobayashi, M. Minagawa, A. Baba, K. Kato, K. Shinbo
IEICE TRANSACTIONS on Electronics, E106.C, 214-219 (2023).

[24]Improvement of hole injection characteristics in wet-processed organic field-effect transistor based on oxidation of silver electrode surface
M. Minagawa, R. Sakai, K. Takashima, T. Ishizaki, K. Kobayashi, S. Sone, Y. Yamanashi, M. Kondo, and Kazunari Shinbo
Jpn. J. Appl. Phys., 61, SB1030 (2022).

[23] Improvement of organic field-effect transistor characteristics via oxidation treatment of Ag nano-ink electrode surfaces
M. Minagawa, K. Kobayashi, S. Sone, and K. Shinbo
Jpn. J. Appl. Phys., 59, SCCA03 (2020).

[22] Understanding the metal-oxides induced reduction of the contact resistance in organic transistors
S. Donnhӓuser, M. Minagawa, S. Blawid, M. Claus
Solid State Electronics, 163, 107676 (2020).

[21] Characteristics of 9,10-diphenylanthracene field-effect transistors obtained by exposing the silver electrodes to oxidative conditions
M. Minagawa, S. Sone, K. Kobayashi, M. Claus, and K. Shinbo
Jpn. J. Appl. Phys., 58, SBBG10 (2019).

[20] Experimental analysis of dark frame growth mechanism in organic light-emitting diodes
M. Minagawa, T. Tanabe, E. Kondo, K. Kamimura, and M. Kimura
Jpn. J. Appl. Phys., 57, 02CA10 (2018).

[19] Reducing the contact resistance in bottom-contact-type OFETs by a AgOx interface layer
M. Minagawa, Y. Kim, M. Claus, and Z. Bao
Appl. Phys. Express, 10, 091601 (2017).

[18] Lifetime Improvement Mechanism in Organic Light-emitting Diodes with Mixed Materials at a Heterojunction Interface
M. Minagawa and N. Takahashi
Jpn. J. Appl. Phys., 55, 02BB08 (2016).

[17] Improvement of On/Off Ratio in Organic Field-effect Transistor with Carrier Generation Layer Using Oblique Deposition
H. Tamura, M. Minagawa, R. Sakikawa, I. Ikarashi, A. Baba, K. Shinbo, K. Kato and F. Kaneko
Jpn. J. Appl. Phys., 55, 02BB06 (2016).

[16] Mitigation of Roll-off Property in OLED by Accumulated Electron Reduction at Emission/Electron-Transport Layer Heterojunction Interface
M. Minagawa, Y. Tsuchida, K. Takahashi, and A. Takahashi
ITE Transactions on Media Technology and Applications, 3, 121-126 (2015).

[15] Improvement of on/off ratio in organic field-effect transistor having thin molybdenum trioxide layer
M. Minagawa, H. Tamura, R. Sakikawa, I. Ikarashi, A. Baba, K. Shinbo, K. Kato and F. Kaneko
IEICE TRANSACTIONS on Electronics, E98, 98-103 (2015).

[14] Reducing the Driving Voltage of Organic Light-Emitting Diodes by Inserting a Transparent Ultrathin Layer of Oxidized Silver as a Hole-Injecting Layer
M. Minagawa, K. Mitsumoto, H. Matsumoto
Org. Electron., 15, 2346-2354 (2014).

[13] Mechanism behind Improved Apparent Field-Effect Mobility in Pentacene Thin-Film Transistors with Thin Molybdenum Trioxide Layer
M. Minagawa, Y. Satoh, A. Takahashi, A. Baba, K. Shinbo, K. Kato and F. Kaneko
Jpn. J. Appl. Phys., 51, 101601 (2012).

[12] Characteristics of Carrier-generated Field-effect Transistors with Pentacene/Vanadium Pentoxide
M. Minagawa, K. Nakai, A. Baba, K. Shinbo, K. Kato and F. Kaneko
J. Korean Phys. Soc., 58, 1402-1406 (2011).

[11] Surface Plasmon Excitation and Emission Light Properties Using Hybrid Setup of Prism and Grating Coupling
K. Shinbo, Y. Hirano, M. Sakai, M. Minagawa, Y. Ohdaira, A. Baba, K. Kato, and F. Kaneko
IEICE TRANSACTIONS on Electronics, .E94-C, 196-197 (2011).

[10] Fabrication and Evaluation of Poly(3-hexylthiophene) Field-Effect Transistor with V2O5 Layer
M. Minagawa, T.Higashikawa, K.Nakai, K.Shinbo, Y.Ohdaira, A. Baba, K.Kato and F. Kaneko
Mol. Cryst. Liq. Cryst., 519, 213-221 (2010).

[9] Fabrication and Characteristics of Field-Effect Transistor with Vanadium Pentoxide and Copper Phthalocyanine Multilayers
M. Minagawa, S.Kitamura, A.Baba, K.Shinbo, K.Kato and F.Kaneko
Appl. Phys. Express, 2, 071502 (2009).

[8] Thermal properties of conduction current and carrier behavior in an organic electroluminescent device
M. Minagawa, K.Shinbo, K.Kato and F.Kaneko
Electronics and Communications in Japan, 92, 24-31 (2009). [English version of No.6]

[7] Surface Plasmon Excitation and Emission Light Property for Otto/Kretschmann Configuration with MEH-PPV Film
M.Hahuka, M. Minagawa, Y.Ohdaira, A.Baba, K.Shinbo, K.Kato and F.Kaneko
IEICE TRANSACTIONS on Electronics, E91-C, 1883-1884 (2008).

[6] Thermal Properties of Conduction Current and Carrier Behaviors in Organic Electroluminescent Device
M. Minagawa, K.Shinbo, K.Kato and F.Kaneko
IEE of Japan. Trans. FM, 127, 635 (2007). [in Japanese]

[5] Analysis of Carrier Traps in Continuously Operated 4,40-bis[N-(1-naphthyl)-N-phenyl-amino]-biphenyl (ƒΏ-NPD) / tris(8-hydroxyquinoline) aluminum (Alq3)-Based Organic Light-Emitting Diodes by Thermally Stimulated Current Measurement
M.Nakahara, M. Minagawa, T.Oyamada, T.Tadokoro, H.Sasabe and C.Adachi
Jpn. J. Appl. Phys. Part II, 46, L636-639 (2007).

[4] Electrical Properties of Organic Field-Effect Transistor with Lewis- Acid Thin Film Between Organic and Insulator Layers
M. Minagawa, K.Shinbo, K.Usuda, T.Takahashi, M.Iwasaki, K.Kato, and F.Kaneko
Jpn. J. Appl. Phys., 45, 8890-8893 (2006).

[3] Organic Field-Effect Transistor with V2O5 Thin Film between Organic and Insulator Layers
M. Minagawa, K.Shinbo, K.Usuda, M.Iwasaki, K.Kato and F.Kaneko
Jpn. J. Appl. Phys., 45, L99-L101 (2006).

[2] Electrical and luminescent properties due to gas adsorption in electroluminescent device of metal-free phthalocyanine
K.Shinbo, M. Minagawa, H.Takasaka, K.Kato, F.Kaneko and T.Kawakami
Colloids and Surfaces, A198-200, 905 -909 (2002).

[1] Conduction and luminescent properties due to NO2 gas adsorption in phthalocyanine electroluminescent device
K.Shinbo, M. Minagawa, H.Takasaka, K.Kato and F.Kaneko
Trans. IEE of Japan, 121-A, 642-647 (2001). [in Japanese]


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Labolatory of Organic Device and Photonics

1F, Building No. 5,
National Institute of Technology, Nagaoka College,
888 Nishikatakai, Nagaoka, Niigata, 940-8532, Japan